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Title
Japanese: 
English:Hole transport in p-type ZnO 
Author
Japanese: 牧野 哲征, 塚崎 敦, 大友 明, 川崎 雅司, 鯉沼 秀臣.  
English: T. Makino, A. Tsukazaki, A. Ohtomo, M. Kawasaki, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 
Volume, Number, Page Vol. 45    No. 8A    pp. 6346-6351
Published date Aug. 2006 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000240512800060
 
Abstract A two-band model involving the A- and B-valence bands was adopted to analyze the temperature-dependent Hall effect measured on p-type ZnO. The hole transport characteristics (mobilities and effective Hall factor) are calculated using the "relaxation time approximation" as a function of temperature. It is shown that the lattice scattering by the acoustic deformation potential is predominant. In the calculation of the scattering rate for ionized impurity mechanism, an activation energy of 100 or 170 meV is used at different compensation ratios between donor and acceptor concentrations. The theoretical Hall mobility at an acceptor concentration of 7 x 10(18) cm(3) is about 70 cm(2) V-1 s(-1) with the activation energy of 100 meV and the compensation ratio of 0.8 at 300 K. We also found that the compensation ratios conspicuously affected the Hall mobilities.

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