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Title
Japanese: 
English:Shifting donor-acceptor photoluminescence in N-doped ZnO 
Author
Japanese: 牧野 哲征, 塚崎 敦, 大友 明, 川崎 雅司, 鯉沼 秀臣.  
English: T. Makino, A. Tsukazaki, A. Ohtomo, M. Kawasaki, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Journal of the Physical Society of Japan 
Volume, Number, Page Vol. 75    No. 7    073701-1-4
Published date Sept. 2006 
Publisher
Japanese:日本物理学会 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000240212900004
 
DOI https://doi.org/10.1143/jpsj.75.073701
Abstract We have grown nitrogen-doped ZnO films by two kinds of epitaxial methods on lattice-matched ScAlMgO4 substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of the excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence can be explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process that provides showing better electrical properties was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptors has been evaluated to be approximate to 170 meV, which is independent of the nitrogen concentration.

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