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Title
Japanese: 
English:Strain effects on exciton resonance energies of ZnO epitaxial layers 
Author
Japanese: 牧野 哲征, 安田 隆, 瀬川 勇三朗, 大友 明, 田村 謙太郎, 川崎 雅司, 鯉沼 秀臣.  
English: T. Makino, T. Yasuda, Y. Segawa, A. Ohtomo, K. Tamura, M. Kawasaki, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 79    No. 9    pp. 1282-1284
Published date Aug. 2001 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000170590800020
 
DOI https://doi.org/10.1063/1.1398328
Abstract Magnitudes of strain in ZnO epitaxial layers grown on sapphire(0001) substrates under various growth conditions were experimentally determined by x-ray diffraction. We discuss the strain-induced energy shift on the exciton resonances, the results of which were analyzed theoretically using the Hamiltonian for the valence bands under in-plain biaxial strain. Comparative studies with GaN evidenced the advantages of ZnO in terms of sensitivity of the strain-induced energy shift and of piezoelectric effect in heterostructures.

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