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Title
Japanese: 
English:Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering 
Author
Japanese: 松本祐司, 村上 真, 金 政武, 大友 明, リップマー ミック, 川崎 雅司, 鯉沼 秀臣.  
English: Y. Matsumoto, M. Murakami, Z.-W. Zin, A. Ohtomo, M. Lippmaa, M. Kawasaki, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics Part 2-Letters 
Volume, Number, Page Vol. 38    No. 6AB    pp. L603-L605
Published date June 1999 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000081578700002
 
DOI https://doi.org/10.1143/JJAP.38.L603
Abstract We have developed a new combinatorial synthesis system integrating a combinatorial shadow mask into a laser MBE (molecular beam epitaxy) chamber. This combinatorial Laser MBE system can be used for fabricating a number of crystalline films with different compositions on a substrate under programmed temperature and pressure conditions. The method was applied to alloying and band gap engineering of ZnO by positional substitution of ME into ZnO thin films. The superiority of the combinatorial methodology to conventional one-by-one synthesis is evident from the high linearity of the c-axis length and band gap dependence on Mg content.

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