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Title
Japanese: 
English:High mobility thin film transistors with transparent ZnO channels 
Author
Japanese: 西井 潤弥, Hossain Faruque M., 高木 伸吾, 會田 哲也, 七種 耕治, 大巻 雄治, 大久保 勇男, 岸本 修也, 大友 明, 福村 知昭, 松倉 文礼, 大野 裕三, 鯉沼 秀臣, 大野 英男, 川崎 雅司.  
English: J. Nishii, F. M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A. Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H. Ohno, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics Part 2-Letters 
Volume, Number, Page Vol. 42    No. 4A    pp. L347-L349
Published date Apr. 2003 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000182278900001
 
DOI https://doi.org/10.1143/jjap.42.l347
Abstract We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx, buffer layer between ZnO channel and amorphous silicon-nitride gate insulator. The TFT structure, dimensions, and materials set are identical to, those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm(2).V-1.s(-1) for devices with maximum process temperature of 300degreesC. The process temperature can be reduced to 150degreesC without much degrading the performance, showing the possibility of the use of polymer substrate.

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