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Title
Japanese: 
English:Controlled carrier generation at a polarity-discontinued perovskite heterointerface 
Author
Japanese: 西村 潤, 大友 明, 大久保 敦史, 村上 洋一, 川崎 雅司.  
English: J. Nishimura, A. Ohtomo, A. Ohkubo, Y. Murakami, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics Part 2-Letters & Express Letters 
Volume, Number, Page Vol. 43    No. 8A    pp. L1032-L1034
Published date Aug. 2004 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000223477500012
 
Abstract Electronic properties of polarity-discontinued heterointerfaces between two perovskite band insulators, LaAlO3 and SrTiO3, have been investigated. Various heterointerfaces with AlO2-LaO/TiO2-SrO and LaO-AlO2/SrO-TiO2 termination including the mixtures of these two domains are fabricated in a single experimental run. This is accomplished by pulsed laser depositions of prescribed coverage (theta(SrO)) of SrO atomic layer on TiO2-terminated SrTiO3 (001) surface and successive LaAlO3 layer, where the processes are regulated in an atomic scale by in situ reflection high-energy electron diffraction. Increasing theta(SrO) from 0 to 1, extra electrons density at the heterointerfaces decreases from a value, close to 0.5 electrons at one Ti site, to zero, while low temperature mobility remains above 100 cm(2)/V(.)s. Our result implies a way to control carrier density in polarity-discontinued heterointerfaces.

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