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Title
Japanese: 
English:Growth mode control of the free carrier density in SrTiO3-d films 
Author
Japanese: 大友 明, ファン ハロルド.  
English: A. Ohtomo, H. Y. Hwang.  
Language English 
Journal/Book name
Japanese: 
English:Journal of Applied Physics 
Volume, Number, Page Vol. 102    No. 8    083704-1-6
Published date Oct. 2007 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000250589300070
 
DOI https://doi.org/10.1063/1.2798385
Abstract We have studied the growth dynamics and electronic properties of SrTiO3-delta homoepitaxial films by pulsed laser deposition. We find that the two dominant factors determining the growth mode are the kinetics of surface crystallization and of oxidation. When matched, persistent two-dimensional layer-by-layer growth can be obtained for hundreds of unit cells. By tuning these kinetic factors, oxygen vacancies can be frozen in the film, allowing controlled, systematic doping across a metal-insulator transition. Metallic films can be grown, exhibiting Hall mobilities as high as 25 000 cm(2)/V s.

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