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Title
Japanese: 
English:Novel semiconductor technologies of ZnO films towards ultraviolet LEDs and invisible FETs 
Author
Japanese: 大友 明, 川崎 雅司.  
English: A. Ohtomo, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Ieice Transactions on Electronics 
Volume, Number, Page Vol. E83C    No. 10    pp. 1614-1617
Published date Oct. 2000 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000090141200013
 
Abstract We present never semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/MgxZn1-xO superlattices were observed. By develop ing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10(-3) Ohmm to 10(4) Ohm cm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.

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