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Title
Japanese: 
English:Double heterostructure based on ZnO and MgxZn1-xO 
Author
Japanese: 大友 明, 川崎 雅司, 鯉田 崇, 鯉沼 秀臣, 櫻井 洋介, 吉田 泰彦, 角谷 正友, 福家 俊郎, 安田 隆, 瀬川 勇三朗.  
English: A. Ohtomo, M. Kawasaki, T. Koida, H. Koinuma, Y. Sakurai, Y. Yoshida, M. Sumiya, S. Fuke, T. Yasuda, Y. Segawa.  
Language English 
Journal/Book name
Japanese: 
English:Silicon Carbide, Iii-Nitrides and Related Materials, Pts 1 and 2 
Volume, Number, Page Vol. 264-2        pp. 1463-1466
Published date Dec. 1998 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000072751000348
 
DOI https://doi.org/10.4028/www.scientific.net/MSF.264-268.1463
Abstract We propose a widegap semiconductor, MgxZn1-xO, as a barrier layer for ultraviolet light emitting devices based on ZnO. MgxZn1-xO single layer films and double heterostructures of MgxZn1-xO / ZnO /MgxZn1-xO were fabricated by pulsed laser deposition on sapphire (0001) substrates. The: photoluminescence peak of MgxZn1-xO shifted from 3.36 eV (x=0) to 3.87 eV (x=0.25) with increasing x. Epitaxial double heterostructures were successfuly grown as veryfied by X-ray diffraction and secoundary ion mass spectrometry. Clear exciton emission in double heterostructure indicates that this alloy system is promising for the light emitting devices.

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