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Title
Japanese: 
English:MgxZn1-xO as a II-VI widegap semiconductor alloy 
Author
Japanese: 大友 明, 川崎 雅司, 鯉田 崇, 増渕 清美, 鯉沼 秀臣, 櫻井 洋介, 吉田 泰彦, 安田 隆, 瀬川 勇三朗.  
English: A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, Y. Segawa.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 72    No. 19    pp. 2466-2468
Published date May 1998 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000073540600038
 
DOI https://doi.org/10.1063/1.121384
Abstract We propose a widegap II-VI semiconductor alloy, MgxZn1-xO, for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO. The c-axis oriented MgxZn1-xO films were epitaxially grown by pulsed laser deposition on ZnO epitaxial films and sapphire (0001) substrates using ceramic targets. Solid solution films were prepared with Me content up to x=0.33, achieving a band gap of 3.99 eV at room temperature. MgO impurity phase segregated at x greater than or equal to 0.36. Lattice constants of MgxZn1-xO films changed slightly (similar to 1%), increasing ina axis and decreasing in c-axis direction with increasing x. These films showed ultraviolet photoluminescence at energies from 3.36 (x=0) to 3.87 eV (x=0.33) at 4.2 K.

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