Home >

news Help

Publication Information


Title
Japanese: 
English:Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates 
Author
Japanese: 大友 明, 木村 肇, 斎藤 啓介, 牧野 哲征, 瀬川 勇三朗, 鯉沼 秀臣, 川崎 雅司.  
English: A. Ohtomo, H. Kimura, K. Saito, T. Makino, Y. Segawa, H. Koinuma, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Journal of Crystal Growth 
Volume, Number, Page Vol. 214        pp. 284-288
Published date June 2000 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000087873200061
 
DOI https://doi.org/10.1016/S0022-0248(00)00093-2
Abstract We have fabricated ZnO thin films on sapphire substrates at temperatures ranging from 350 to 1000 degrees C by laser molecular-beam epitaxy. With increasing growth temperature, lateral grain size evaluated by X-ray reciprocal space mapping increased resulting in improved electron mobility. When the film was grown at 1000 degrees C, an electron mobility as large as 90 cm(2)/Vs was achieved. By annealing in 1 atm of oxygen at 1000 degrees C, thin films having much larger grain size (> 5 mu m(2)) and higher mobility(similar to 120 cm(2)/V s) comparable with those for bulk single crystals could be obtained.

©2007 Tokyo Institute of Technology All rights reserved.