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Title
Japanese: 
English:Electronic transport properties in SrTiO3-LaAlO3 solid-solution films 
Author
Japanese: 大友 明, 西村 潤, 村上 洋一, 川崎 雅司.  
English: A. Ohtomo, J. Nishimura, Y. Murakami, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 88    No. 23    232107-1-3
Published date June 2006 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000238914500030
 
DOI https://doi.org/10.1063/1.2210297
Abstract We report on the structural and electronic properties of solid-solution films consisting of perovskite band insulators, SrTiO3 and LaAlO3, with a chemical formula of Sr1-xLaxTi1-xAlxO3-delta. Single crystalline films grown by pulsed-laser deposition are fairly insulating below 300 K when having x >= 0.6, while x < 0.6 films exhibit electronic conduction accountable with a variable-range hopping. Room temperature conductivity has a maximum value of 20 Omega(-1) cm(-1) at x similar to 0.2. Hall measurements reveal that the density of the carriers varies as x(1-x) per Ti site up to x similar to 0.35, apparently indicating that La3+ donates one electron to a remaining Ti site. The results are discussed in comparison with the electronic properties of LaySr1-yTiO3 films in terms. of different carrier localization mechanisms.

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