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Title
Japanese: 
English:Photo-irresponsive thin-film transistor with MgxZn1-xO channel 
Author
Japanese: 大友 明, 高木 伸吾, 田村 謙太郎, 牧野 哲征, 瀬川 勇三朗, 鯉沼 秀臣, 川崎 雅司.  
English: A. Ohtomo, S. Takagi, K. Tamura, T. Makino, Y. Segawa, H. Koinuma, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics Part 2-Letters & Express Letters 
Volume, Number, Page Vol. 45    No. 24-28    pp. L694-L696
Published date July 2006 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000239640700026
 
DOI https://doi.org/10.1143/jjap.45.l694
Abstract If field-effect devices based on wide-band-gap semiconductors are ever to find wide application in real transparent electronics, their performance is required remain stable under visible light. In particular, a thin-film transistor (TFT) irresponsive to visible illumination has a practical advantage, if used for the switching of pixels in a liquid crystal display (LCD), because shadeless pixels make it possible to lower cost and power consumption. In this letter, we report such a TFT with a channel made of low-temperature-grown MgxZn1-xO film. This device with a polycrystalline Mg0.1Zn0.9O channel operated under illumination shows the same transfer characteristics as those in the dark when the wavelength is longer than 400nm. The field-effect mobility was measured to be 0.8cm(2).V-1.s(-1), comparable to that of amorphous Si-based TFTs used in commercial LCDs.

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