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Title
Japanese: 
English:Effect of in situ annealed SnO2 buffer layer on structural and electrical properties of (001) SnO2/TiO2 heterostructures 
Author
Japanese: 奥出 正樹, 上野 和紀, 伊藤 俊, 菊池 昌枝, 大友 明, 川崎 雅司.  
English: M. Okude, K. Ueno, S. Itoh, M. Kikuchi, A. Ohtomo, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Journal of Physics D-Applied Physics 
Volume, Number, Page Vol. 41    No. 12    125309-1-4
Published date May 2008 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000256568000040
 
DOI https://doi.org/10.1088/0022-3727/41/12/125309
Abstract We have studied heteroepitaxial growth of SnO2 films on (001) TiO2 substrates by pulsed laser deposition. In order to reduce crystalline defects arising from a large lattice mismatch (3.1%), a SnO2 buffer layer is employed. The buffer layer prepared by in situ annealing under optimized conditions exhibits an atomically flat surface and partially relaxed lattice, which play an important role in the improvement of crystallinity and electrical properties for the overgrown layer. The results are discussed based on the structural characterization by means of x-ray diffraction and transmission electron microscopy and temperature dependence of Hall mobility.

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