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Title
Japanese: 
English:Insulator-to-metal transition in ZnO by electric double layer gating 
Author
Japanese: 下谷 秀和, 浅沼 春彦, 塚崎 敦, 大友 明, 川崎 雅司, 岩佐 義宏.  
English: H. Shimotani, H. Asanuma, A. Tsukazaki, A. Ohtomo, M. Kawasaki, Y. Iwasa.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 91    No. 8    082106-1-3
Published date Aug. 2007 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000248984800049
 
DOI https://doi.org/10.1063/1.2772781
Abstract The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2x10(13) cm(-2) was achieved. The highest sheet conductance at room temperature was similar to 1 mS, which was sufficient to maintain the metallic state down to 10 K. These results strongly suggest the versatility of electric double layer gating for various materials.

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