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Title
Japanese: 
English:SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition 
Author
Japanese: 角谷 正友, 塚崎 敦, 福家 俊郎, 大友 明, 鯉沼 秀臣, 川崎 雅司.  
English: M. Sumiya, A. Tsukazaki, S. Fuke, A. Ohtomo, H. Koinuma, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Applied Surface Science 
Volume, Number, Page Vol. 223    No. 1-3    pp. 206-209
Published date Feb. 2004 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000188510700033
 
DOI https://doi.org/10.1016/s0169-4332(03)00923-1
Abstract Composition spread ZnO:(Ga,N) films were deposited on ScAlMgO4 substrates using both temperature gradient method and alternating pulsed laser deposition (PLD) onto two targets of highly-pure and Ga-doped ZnO. The intensity ratios of (14) N O-16(-) and (71) Ga O-16(-) to that of (70) Zn (16) O- detected by secondary ion mass spectroscopy (SIMS) analysis were found to correspond to N and Ga concentrations (C-N and C-Ga), respectively. Incorporation of nitrogen into ZnO film with O-face (-c) polarity deposited by PLD depended strongly on substrate temperature due to thermal-activated desorption of N, while C-N into Zn-face (+c) ZnO film was independent of the temperature. The ratio Of C-N/C-Ga in the ZnO:(Ga,N) film covered a wide range including the value of 2, satisfying the theoretical prediction to produce p-type carrier in ZnO, at various C-Ga levels (10(18)-10(20) cm(-3)). However, p-type conduction was not observed in Hall bars array patterned on the composition spread films. The temperature gradient method and the quantitative SIMS analysis revealed that simple adjustment of C-N/C-Ga ratio was not able to lead to production of p-type ZnO film.

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