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Title
Japanese: 
English:Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO4 heterointerface 
Author
Japanese: 鈴木 崇雄, 大友 明, 塚崎 敦, 佐藤 二美, 西井 潤弥, 大野 英男, 川崎 雅司.  
English: T. I. Suzuki, A. Ohtomo, A. Tsukazaki, F. Sato, J. Nishii, H. Ohno, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Advanced Materials 
Volume, Number, Page Vol. 16    No. 21    pp. 1887-1890
Published date Nov. 2004 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000225848000003
 
DOI https://doi.org/10.1002/adma.200401018
Abstract At a lattice-matched ZnO/ScAIMgO(4) heterointerface, Hall and field-effect mobilities of grain-boundary-free ZnO channels have been simultaneously characterized under a gate electric field (E-G) applied through a ScAIMGO(4) dielectric gate. The field-effect mobility increased linearly with increasing EG (see Figure), clearly in contrast to the supralinear (exponential) dependence that has been previously reported for polycrystalline channels.

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