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Title
Japanese: 
English:Blue light-emitting diode based on ZnO 
Author
Japanese: 塚崎 敦, 久保田 将司, 大友 明, 尾沼 猛儀, 大谷 啓太, 大野 英男, 秩父 重英, 川崎 雅司.  
English: A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics Part 2-Letters & Express Letters 
Volume, Number, Page Vol. 44    No. 20-23    pp. L643-L645
Published date May 2005 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000229947100009
 
DOI https://doi.org/10.1143/jjap.44.l643
Abstract A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates the current, giving rise to the radiative recombination in the p-type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p-type layer, which is one or two orders of magnitude lower than that in the n-type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n-type ZnO. The employment of conducting ZnO substrates may solve the latter problem.

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