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Title
Japanese: 
English:Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric 
Author
Japanese: 塚崎 敦, 大友 明, 千葉 大地, 大野 裕三, 大野 英男, 川崎 雅司.  
English: A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 93    No. 24    241905-1-3
Published date Dec. 2008 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000261896400023
 
DOI https://doi.org/10.1063/1.3035844
Abstract A top-gate field-effect device with atomic-layer-deposited Al2O3 dielectric was fabricated to investigate magnetotransport properties of two-dimensional electron gas (2DEG) at a semi-insulating ZnO-Mg0.12Zn0.88O double heterostructure grown by laser molecular-beam epitaxy. Hall mobility monotonically increased as the density of accumulated electrons increased. The highest mobility at 2 K was recorded to be 5000 cm2 V-1 s-1 at a 2DEG density of 1.2x1012 cm-2, which is comparable to the previously reported value for a metallic ZnO/Mg0.2Zn0.8O heterostructure. Insulator-to-metal transition was observed at a critical density of 6x1011 cm-2. The metallic-state channel exhibited Shubnikov-de Haas oscillations, demonstrating an electric-field tunable quantum device based on transparent oxide semiconductor.

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