Home >

news Help

Publication Information


Title
Japanese: 
English:High-mobility electronic transport in ZnO thin films 
Author
Japanese: 塚崎 敦, 大友 明, 川崎 雅司.  
English: A. Tsukazaki, A. Ohtomo, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 88    No. 15    152106-1-3
Published date Apr. 2006 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000236796400037
 
DOI https://doi.org/10.1063/1.2193727
Abstract A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15Zn0.85O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum growth conditions where gross concentration of intrinsic defects is thought to be reduced. For the best qualified film, Hall mobilities of 5000 cm(2) V-1 s(-1) at 100 K and 440 cm(2) V-1 s(-1) at 300 K were recorded with the residual electron densities of 4x10(14) and 9x10(15) cm(-3), respectively.

©2007 Tokyo Institute of Technology All rights reserved.