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Title
Japanese: 
English:Quantum Hall effect in polar oxide heterostructures 
Author
Japanese: 塚崎 敦, 大友 明, 北 智洋, 大野 裕三, 大野 英男, 川崎 雅司.  
English: A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Science 
Volume, Number, Page Vol. 315    No. 5817    pp. 1388-1391
Published date Mar. 2007 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000244752200026
 
DOI https://doi.org/10.1126/science.1137430
Abstract We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 x 10(12) to 3.7 x 10(12) per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 +/- 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

©2007 Tokyo Institute of Technology All rights reserved.