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Title
Japanese: 
English:Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO 
Author
Japanese: 塚崎 敦, 大友 明, 尾沼 猛儀, 大谷 亮, 牧野 哲征, 角谷 正友, 大谷 啓太, 秩父 重英, 福家 俊郎, 瀬川 勇三朗, 大野 英男, 鯉沼 秀臣, 川崎 雅司.  
English: A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Nature Materials 
Volume, Number, Page Vol. 4    No. 1    pp. 42-46
Published date Jan. 2005 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000226113600014
 
DOI https://doi.org/10.1038/nmat1284
Abstract Since the successful demonstration of a blue light-emitting diode (LED), potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus, and even p–n junctions. However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate. If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors. Here we report high-quality undoped fi lms with electron mobility exceeding that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p–i–n junctions is demonstrated at room-temperature.

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