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Title
Japanese: 
English:Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer 
Author
Japanese: 塚崎 敦, 大友 明, 吉田 伸, 川崎 雅司, Chia Chin Hau, 牧野 哲征, 瀬川 勇三朗, 鯉田 崇, 秩父 重英, 鯉沼 秀臣.  
English: A. Tsukazaki, A. Ohtomo, S. Yoshida, M. Kawasaki, C. H. Chia, T. Makino, Y. Segawa, T. Koida, S. F. Chichibu, H. Koinuma.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Letters 
Volume, Number, Page Vol. 83    No. 14    pp. 2784-2786
Published date Oct. 2003 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
File
Official URL <Go to ISI>://000185664000018
 
DOI https://doi.org/10.1063/1.1615834
Abstract The growth mode of ZnO thin films can be well regulated in a molecular layer-by-layer growth by employing a ZnO buffer layer deposited on a lattice-matched ScAlMgO4 substrate and annealed at high temperature. The annealed buffer layer has atomically flat surface and relaxed (strain-free) crystal structure. The intensity oscillation of reflection high-energy electron diffraction persisted for more than a 100-nm film deposition under optimized conditions on such a buffer layer. Thus prepared thin films show free exciton emissions in a 5 K photoluminescence spectrum and excited-state exciton resonance structures in a reflection spectrum, both indicating very high optical quality.

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