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Title
Japanese: 
English:High electron mobility exceeding 104 cm2V-1s-1 in MgxZn1-xO/ZnO single heterostructures grown by molecular beam epitaxy 
Author
Japanese: 塚崎 敦, 湯地 洋行, 赤坂 俊輔, 田村 謙太郎, 中原 健, 田辺 哲弘, 高須 秀視, 大友 明, 川崎 雅司.  
English: A. Tsukazaki, H. Yuji, S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, H. Takasu, A. Ohtomo, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Applied Physics Express 
Volume, Number, Page Vol. 1    No. 5    055004-1-3
Published date May 2008 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL <Go to ISI>://000256449600022
 
DOI https://doi.org/10.1143/apex.1.055004
Abstract Nominally undoped MgxZn1-xO/ZnO (x = 0.05 and 0.08) single heterostructures were prepared on Zn-polar ZnO substrates by using plasma assisted molecular beam epitaxy (MBE). The samples showed a metallic conductivity below 50 K and a mobility exceeding 104 cm2 V-1 s-1 at 0.5 K. We observed quantum Hall effect accompanying Shubnikov-de Haas oscillations, in which zero-resistance states were clearly seen above 5T. Rotation experiments in magnetic field suggest strong two-dimensional carrier confinement at low temperatures. The results indicate that the MBE grown films have much higher quality than the previously reported samples grown by pulsed laser deposition.

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