Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2

Publication Information

Title

Japanese:
English:	Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm2

Author

Japanese:	齋藤尚史, 宮本恭幸, 古屋一仁.
English:	H. Saito, Y. Miyamoto, K. Furuya.

Language

English

Journal/Book name

Japanese:
English:	Applied Phys. Exp.

Volume, Number, Page

vol. 3 no. 8 p. 084101

Published date

Aug. 2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: