Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Publication Information

Title

Japanese:
English:	Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Author

Japanese:	MEHMET S, クロスジェフリースコット, 石原宏, 篠崎和夫.
English:	Mehmet S. Bozgeyik, J.S. Cross, H. Ishiwara, K. Shinozaki.

Language

English

Journal/Book name

Japanese:
English:	Microelectronic Engineering

Volume, Number, Page

Vol. 87 No. 11 pp. 2173-2177

Published date

July 2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI