Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory

Publication Information

Title

Japanese:
English:	Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory

Author

Japanese:	神谷利夫, 野村研二, 細野秀雄.
English:	Toshio Kamiya, Kenji Nomura, Hideo Hosono.

Language

English

Journal/Book name

Japanese:
English:	Phys. Status Solidi A

Volume, Number, Page

vol. 207 pp. 1698-1703

Published date

2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI