Origin of high-density hole doping and anisotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first-principles calculations

Publication Information

Title

Japanese:
English:	Origin of high-density hole doping and anisotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first-principles calculations

Author

Japanese:	平松秀典, 神谷利夫, 植田和茂, 平野正浩, 細野秀雄.
English:	Hidenori Hiramatsu, Toshio Kamiya, Kazushige Ueda, Masahiro Hirano, Hideo Hosono.

Language

English

Journal/Book name

Japanese:
English:	Phys. Status Solidi A

Volume, Number, Page

vol. 207 pp. 1636–1641

Published date

2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI