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Publication Information
Title
Japanese:
Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET
English:
Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric
Author
Japanese:
寺尾良輔
,
金澤徹
,
池田俊介
,
米内義晴
,
加藤淳
,
宮本恭幸
.
English:
Ryousuke Terao
,
Toru Kanazawa
,
Shunsuke Ikeda
,
Yosiharu Yonai
,
atsushi kato
,
YASUYUKI MIYAMOTO
.
Language
Japanese
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Sept. 2010
Publisher
Japanese:
English:
Conference name
Japanese:
第71回応用物理学会学術講演会
English:
Conference site
Japanese:
長崎
English:
©2007
Tokyo Institute of Technology All rights reserved.