InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer

Publication Information

Title

Japanese:
English:	InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer

Author

Japanese:	金澤徹, 寺尾良輔, 山口裕太郎, 池田俊介, 米内義晴, 宮本恭幸.
English:	Toru Kanazawa, Ryousuke Terao, Yuutarou Yamaguchi, Shunsuke Ikeda, Yosiharu Yonai, YASUYUKI MIYAMOTO.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

pp. 129-130

Published date

Sept. 2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2010 International Conference on Solid State Devices and Materials

Conference site

Japanese:
English:	Tokyo