Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

Publication Information

Title

Japanese:
English:	Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

Author

Japanese:	高橋綱己, 小寺哲夫, 小田俊理, 内田建.
English:	T. Takahashi, T. Kodera, S. Oda, K. Uchida.

Language

English

Journal/Book name

Japanese:
English:	Journal of Applied Physics

Volume, Number, Page

Vol. 109 pp. 034505

Published date

Feb. 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI