Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3

Publication Information

Title

Japanese:
English:	Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1×1018cm-3

Author

Japanese:	角谷直哉, 高橋綱己, K. Chen, 小寺哲夫, 小田俊理, 内田建.
English:	N. Kadotani, T. Takahashi, K. Chen, T. Kodera, S. Oda, K. Uchida.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Dec. 2010

Publisher

Japanese:
English:

Conference name

Japanese:
English:	EDM2010

Conference site

Japanese:
English:	San Francisco