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Title
Japanese: 
English:Improvement of electron mobility above 100,000cm2 V-1s-1 in MgxZn1-xO/ZnO heterostructures 
Author
Japanese: 赤坂 俊輔, 塚崎 敦, 中原 健, 大友 明, 川崎 雅司.  
English: S. Akasaka, A. Tsukazaki, K. Nakahara, A. Ohtomo, M. Kawasaki.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics 
Volume, Number, Page Vol. 50        080215-1-3
Published date Aug. 5, 2011 
Publisher
Japanese:日本応用物理学会 
English:The Japan Society of Applied Physics 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL http://jjap.jsap.jp/link?JJAP/50/080215
 
DOI https://doi.org/10.1143/JJAP.50.080215
Abstract We discuss the electron mobility (µ) of a two-dimensional electron gas (2DEG) confined at the MgxZn1-xO/ZnO heterointerface grown by molecular-beam epitaxy. With increasing x from 0.05 to 0.2, the electron density (n) was enhanced and µ was suppressed due to interface roughness or alloy disorder scattering. By the optimization of growth conditions, in particular growth rate, ionized impurity scattering in the ZnO channel could be reduced significantly. With tuning n by a gate voltage on top-gated Hall-bar devices, the peak µ at 2 K was enhanced to 130,000 cm2 V-1 s-1 at n = 3×1011 cm-2.

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