Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors

Publication Information

Title

Japanese:
English:	Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors

Author

Japanese:	Tue T. Phan, Trinh Q. Bui Nguyen, 宮迫毅明, Thanh V. Pham, 徳光永輔.
English:	Tue T. Phan, Trinh Q. Bui Nguyen, Takaaki Miyasako, Thanh V. Pham, Eisuke Tokumitsu.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Apr. 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2011 Spring meeting, Materials Research Society

Conference site

Japanese:
English:	San Francisco