MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm

Publication Information

Title

Japanese:
English:	MOVPE-regrown source/drain regions for III-V MOSFETs with high drain current of 1.28 A/mm

Author

Japanese:	金澤徹, 寺尾良輔, 池田俊介, 宮本恭幸.
English:	T. Kanazawa, R. Terao, S. Ikeda, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 14, 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	23rd Int. Conf. Indium Phosphide and Related Materials (IPRM2011)

Conference site

Japanese:
English:	Berlin

Official URL