Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires

Publication Information

Title

Japanese:
English:	Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires

Author

Japanese:	武部直明, 宮本恭幸.
English:	N. Takebe, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 14, 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)

Conference site

Japanese:
English:	Daejeon

Official URL