A 21V Output Charge Pump Circuit with Appropriate Well-Bias Supply Technique in 0.18 μm Si CMOS

Publication Information

Title

Japanese:
English:	A 21V Output Charge Pump Circuit with Appropriate Well-Bias Supply Technique in 0.18 μm Si CMOS

Author

Japanese:	白根篤史, 伊藤浩之, 石原昇, 益一哉.
English:	Atsushi Shirane, Hiroyuki Ito, Noboru Ishihara, Kazuya Masu.

Language

English

Journal/Book name

Japanese:
English:	International SoC Design Conference 2011 (ISOCC2011)

Volume, Number, Page

pp. 28-31

Published date

Nov. 17, 2011

Publisher

Japanese:
English:	International SoC Design Conference 2011 (ISOCC2011)

Conference name

Japanese:
English:	International SoC Design Conference 2011 (ISOCC2011)

Conference site

Japanese:
English:	Jeju