Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Sol-gel ITO and Stacked (BLT/PZT) Gate Insulator

Publication Information

Title

Japanese:
English:	Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Sol-gel ITO and Stacked (BLT/PZT) Gate Insulator

Author

Japanese:	Bui Nguyen Quoc Trinh, 宮迫毅明, 金田敏彦, Pham Van Thanh, Phan Trong Tue, 徳光永輔, 下田達也.
English:	Bui Nguyen Quoc Trinh, Takaaki Miyasako, Toshihiko Kaneda, Pham Van Thanh, Phan Trong Tue, Eisuke Tokumitsu, Tatsuya Shimoda.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2011 International Conference on Solid State Devices and Materials (SSDM 2011)

Conference site

Japanese:
English:	Nagoya