Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact

Publication Information

Title

Japanese:
English:	Fabrication of few-electron silicon quantum dot devices based on an SOI substrate with a top gate cintact

Author

Japanese:	堀部浩介, 小寺哲夫, 蒲原知宏, 内田建, 小田俊理.
English:	K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

P-11

Published date

Oct. 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists

Conference site

Japanese:
English:	Tokyo