High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10<sup>5</sup> A/cm<sup>2</sup> Grown by Metal-Organic Vapor-Phase Epitaxy

Publication Information

Title

Japanese:
English:	High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10⁵ A/cm² Grown by Metal-Organic Vapor-Phase Epitaxy

Author

Japanese:	H. Sugiyama, 寺西豊志, 鈴木左文, 浅田雅洋.
English:	H. Sugiyama, A. Teranishi, S. Suzuki, M. Asada.

Language

English

Journal/Book name

Japanese:
English:	J. Crystal Growth

Volume, Number, Page

vol. 336 pp. 24-28

Published date

Sept. 10, 2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: