Room-Temperature Resonant Tunneling Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology

Publication Information

Title

Japanese:	高精度結晶成長技術による共鳴トンネルダイオードテラヘルツ発振器の実現
English:	Room-Temperature Resonant Tunneling Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology

Author

Japanese:	杉山弘樹, 鈴木左文, 浅田雅洋.
English:	H. Sugiyama, S. Suzuki, M. Asada.

Language

English

Journal/Book name

Japanese:	NTT技術ジャーナル
English:	NTT Technical Review

Volume, Number, Page

vol. 9 no. 10 pp. 12-17

Published date

July 1, 2011

Publisher

Japanese:
English:

Conference name

Japanese:
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Conference site

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