Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors

Publication Information

Title

Japanese:
English:	Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors

Author

Japanese:	高村陽太, 林建吾, 周藤悠介, 中根了昌, 菅原聡.
English:	Y. Takamura, K. Hayashi, Y. Shuto, R. Nakane, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:	J. Electron. Mater.

Volume, Number, Page

vol. 41 no. 5 pp. 954-958

Published date

Apr. 2012

Publisher

Japanese:
English:	Springer

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI