Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode

Publication Information

Title

Japanese:
English:	Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode

Author

Japanese:	加藤淳, 金澤徹, 池田俊介, 米内義晴, 宮本恭幸.
English:	Atsushi Kato, Toru Kanazawa, Shunsuke Ikeda, Yosiharu Yonai, Yasuyuki Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	IEICE Trans. Electron.

Volume, Number, Page

vol. E95-C no. 5 pp. 904-919

Published date

May 1, 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI