GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure

Publication Information

Title

Japanese:
English:	GaAsSb/InGaAs vertical tunnel FET with a 25 nm-wide channel mesa structure

Author

Japanese:	藤松基彦, 齋藤尚史, 宮本恭幸.
English:	Motohiko Fujimatsu, Hisashi Saito, YASUYUKI MIYAMOTO.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

2011

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2011 International Conference on Solid State Devices and Materials(SSDM 2011)

Conference site

Japanese:
English:	Nagoya