Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices

Publication Information

Title

Japanese:
English:	Diamond Semiconductor JFETs by Selectively Grown n+-Diamond Side Gates for Next Generation Power Devices

Author

Japanese:	岩崎孝之, 星野雄斗, 都築康平, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, 波多野睦子.
English:	Takayuki Iwasaki, Yuto Hoshino, Kouhei Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, T. Matsumoto, H. Okushi, S. Yamasaki, Mutsuko Hatano.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2012 IEEE International Electron Devices Meeting (IEDM)(2012)

Conference site

Japanese:
English:	San Francisco