EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

Publication Information

Title

Japanese:
English:	EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature

Author

Language

English

Journal/Book name

Japanese:
English:	IEEE Transactions on Electron Devices

Volume, Number, Page

Vol. 59 No. 2 pp. 269-276

Published date

Feb. 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI