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Publication Information
Title
Japanese:
English:
EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature
Author
Japanese:
川那子高暢
,
李映勲
,
角嶋邦之
,
パールハットアヘメト
,
筒井一生
,
西山彰
,
杉井信之
,
名取研二
,
服部健雄
,
岩井洋
.
English:
Takamasa Kawanago
,
Yeonghun Lee
,
Kuniyuki KAKUSHIMA
,
Ahmet Parhat
,
KAZUO TSUTSUI
,
西山彰
,
Nobuyuki Sugii
,
KENJI NATORI
,
takeo hattori
,
HIROSHI IWAI
.
Language
English
Journal/Book name
Japanese:
English:
IEEE Transactions on Electron Devices
Volume, Number, Page
Vol. 59 No. 2 pp. 269-276
Published date
Feb. 2012
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.1109/TED.2011.2174442
©2007
Tokyo Institute of Technology All rights reserved.