Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs

Author

Language

English

Journal/Book name

Japanese:
English:	Solid-State Electronics

Volume, Number, Page

Vol. 74 pp. 2-6

Published date

Aug. 2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI

https://doi.org/10.1016/j.sse.2012.04.003

©2007 Tokyo Institute of Technology All rights reserved.