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Publication Information
Title
Japanese:
English:
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate–to-drain dielectric breakdown
Author
Japanese:
Miranda Enrique
,
川那子高暢
,
角嶋邦之
,
J. Sune
,
岩井洋
.
English:
Miranda Enrique
,
Takamasa Kawanago
,
Kuniyuki KAKUSHIMA
,
J. Sune
,
HIROSHI IWAI
.
Language
English
Journal/Book name
Japanese:
English:
Microelectronics Reliability
Volume, Number, Page
Vol. 52 pp. 1909-1912
Published date
2012
Publisher
Japanese:
English:
Conference name
Japanese:
English:
Conference site
Japanese:
English:
DOI
https://doi.org/10.1016/j.microrel.2012.06.012
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Tokyo Institute of Technology All rights reserved.