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Title
Japanese:金ナノ粒子とナノギャップ電極を用い た単電子トランジスタ 
English:Single-Electron Transistor made by Au Nanoparticles and Nanogap Electrodes 
Author
Japanese: 真島豊.  
English: YUTAKA MAJIMA.  
Language Japanese 
Journal/Book name
Japanese:日本真空学会 
English:The Journal of the Vacuum Society of Japan 
Volume, Number, Page Vol. 55        p. 328-332
Published date Aug. 2012 
Publisher
Japanese:日本真空学会 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Abstract A combination of bottom-up processes with top-down processes is one of the candidates to fabricate nanodevices with precise structures　in a　subnanometer scale. Single-electron transistors (SETs) have been studied extensively, because SETs can be　nanodevices　with low power consumption and high charge sensitivity. For the practical application of SETs, fabrication techniques for a precise structure, high process yield, and high stability need to be developed. Here, we demonstrate ideal Coulomb diamonds in Au nanoparticles　(NPs) SETs. Gap separation of nanogap electrodes was controlled by the electroless Au plating method. Size controlled Au NPs　are chemisorbed between the nanogap electrodes as Coulomb islands.

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