Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot

Publication Information

Title

Japanese:
English:	Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot

Author

Japanese:	神岡純, 小寺哲夫, 堀部浩介, 河野行雄, 小田俊理.
English:	J.Kamioka, T. Kodera, K. Horibe, Y. Kawano, SHUNRI ODA.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:	IEEE Silicon Nanoelectronics Workshop

Conference site

Japanese:
English:	Honolulu